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| 2SK2715 Transistors 10V Drive Nch MOS FET 2SK2715 Structure Silicon N-channel MOSFET External dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuit can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 Abbreviated symbol : K2715 Application Switching Packaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 2500 Inner circuit 2SK2715 (1) Gate (2) Drain (3) Source (1) (2) Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg Limits 500 30 2 6 2 6 20 150 -55 to +150 Unit V V A A A A W C C Total power dissipation (Tc=25C) Channel temperature Storage temperature Pw10s, Duty cycle1% Rev.B 2.5 1.5 (3) 9.5 1/4 2SK2715 Transistors Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf trr Qrr Min. - 500 - 2.0 - 0.6 - - - - - - - - - Typ. - - - - 3.0 1.5 280 58 23 10 12 30 63 410 1.7 Max. 100 - 100 4.0 4.0 - - - - - - - - - - Unit nA V A V S pF pF pF ns ns ns ns ns C Test Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 150V VGS=10V RL=150 RG=10 IDR=2A, VGS=0V di/dt=100A/s Electrical characteristic curves 10 5 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 10 m 1.4 1.2 1.0 0.8 0.6 0.4 0.2 4.5V 4V 1 2 3 4 5 6 7 8 9 10 5V DRAIN CURRENT : ID (A) t S( in D n yR 2 tio d b a er ite 1 Op lim is 0.5 0.2 0.1 0.05 s hi ar ea 2.0 1.8 1.6 s 0 s 10 1m s n m tio 00 ra =1 pe PW C O D s 50 100 200 500 1000 VGS=10V 6V ) on Ta=25C Pulsed 10 5 VDS=10V Pulsed Ta=-25C 25C 75C 125C 2 1 0.5 0.2 0.1 0.05 0 1 2 3 4 5 6 7 8 0.02 Tc=25C Single pulse 0.01 12 5 10 20 0 0 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximum safe operating area Fig.2 Typical output characteristics Fig.3 Typical transfer characteristics GATE THRESHOLD VOLTAGE : VGS(th) (V) 6.4 5.6 4.8 4.0 3.2 2.4 1.6 0.8 0 -50 -25 0 25 50 75 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (W) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=10V lD=1mA 50 VGS=4V Pulsed 8 7 6 5 4 ID=2A 3 1A 2 1 0 5 10 15 20 25 30 Ta=25C Pulsed 20 10 5 Ta=125C 75C 25C 2 1 0.5 0.01 0.02 0.05 0.1 0.2 -25C 100 125 150 0.5 1 2 5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate threshold voltage vs. channel temperature Fig.5 Static drain-source on-state resistance vs. drain current Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.B 2/4 2SK2715 Transistors FORWARD TRANSFER ADMITTANCE : |YfS| (S) REVERSE DRAIN CURRENT : IDR (A) 12 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V Pulsed 5 2 1 0.5 0.2 0.1 0.05 5 VDS=10V Pulsed -25C 25C 75C Ta=125C VGS=0V Pulsed Ta=125C 75C 25C -25C 10 8 6 ID=2A 4 2 0 -50 -25 1A 2 1 0.5 0.2 0.1 0.05 0 0 25 50 75 100 125 150 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.5 1.0 1.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage ( ) REVERSE DRAIN CURRENT : IDR (A) 5 Ta=25C Pulsed 10V VGS=0V 1000 500 CAPACITANCE : C (pF) 200 100 50 20 10 5 2 1 SWITCHING TIME : t (ns) 2 1 0.5 Ciss Ta=25C VGS=0V f=1MHz Pulsed 1000 500 200 100 50 Ta=25C VDD=150V VGS=10V RG=10 Pulsed Coss Crss tf td(off) 0.2 0.1 0.05 0 20 tr 10 td(on) 0.5 1.0 1.5 2 5 10 20 50 100 200 5001000 5 0.1 0.2 0.5 1 2 5 10 20 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.10 Reverse drain current vs. source-drain voltage ( ) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) 500 DRAIN-SOURCE VOLTAGE : VDS (V) 450 400 350 300 250 200 150 100 50 0 0 4 8 VDD=400V 250V 100V VDS 14 VDD=100V 250V 400V VGS REVERSE RECOVERY TIME : trr (ns) GATE-SOURCE VOLTAGE : VGS (V) 20 Ta=25C ID=5A 18 Pulsed 16 5000 Ta=25C di/dt=100A/s VGS=0V 2000 Pulsed 1000 500 12 10 8 6 4 2 200 100 50 0.1 12 16 20 24 28 0 32 0.2 0.5 1 2 5 10 TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Dynamic input characteristics (See Figure 18 for measurement circuit) Fig.14 Reverse recovery time vs. reverse drain current Rev.B 3/4 2SK2715 Transistors 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25C th(ch-c) (t)=r(t) * th(ch-c) th(ch-c)=6.25C/W 0.01 0.01 Single pulse 100 1m 10m PW T 0.001 10 D=PW T 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td(off) tf toff VDD td(on) ton tr Fig.16 Switching time measurement circuit Fig.17 witching time waveforms IG=2mA RG VGS ID D.U.T. RL VDS VDD Fig.18 Gate charge measurement circuit Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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